1
$2.0705
$2.0705
10
$1.7271
$17.2710
100
$1.3736
$137.3600
500
$1.1615
$580.7500
1000
$0.9797
$979.7000
2000
$0.9393
$1,878.6000
5000
$0.8989
$4,494.5000
10000
$0.8989
$8,989.0000
| 类型 | 描述 |
| 制造商 | Toshiba Electronic Devices and Storage Corporation |
| 系列 | U-MOSIX-H |
| 包裹 | 卷带式 (TR) |
| 产品状态 | ACTIVE |
| 包装/箱 | 8-PowerTDFN |
| 安装类型 | Surface Mount |
| 工作温度 | 175°C |
| 技术 | MOSFET (Metal Oxide) |
| 场效应管类型 | N-Channel |
| 电流 - 连续漏极 (Id) @ 25°C | 150A (Tc) |
| Rds On（最大）@Id、Vgs | 0.65mOhm @ 50A, 10V |
| 功耗（最大） | 960mW (Ta), 210W (Tc) |
| Vgs(th)（最大值）@Id | 2.1V @ 1mA |
| 供应商设备包 | 8-SOP Advance (5x5.75) |
| 驱动电压（最大导通电阻、最小导通电阻） | 4.5V, 10V |
| Vgs（最大） | ±20V |
| 漏源电压 (Vdss) | 30 V |
| 栅极电荷 (Qg)（最大值）@Vgs | 110 nC @ 10 V |
| 输入电容 (Ciss)（最大值）@Vds | 10000 pF @ 15 V |
