TPHR6503PL1,LQ

  • image of 单 FET、MOSFET>TPHR6503PL1,LQ
  • image of 单 FET、MOSFET>TPHR6503PL1,LQ
TPHR6503PL1,LQ
单 FET、MOSFET
Toshiba Electronic Devices and Storage Corporation
UMOS9 SOP-ADV(N
卷带式 (TR)
15151
: $0.8989
: 15151

1

$2.0705

$2.0705

10

$1.7271

$17.2710

100

$1.3736

$137.3600

500

$1.1615

$580.7500

1000

$0.9797

$979.7000

2000

$0.9393

$1,878.6000

5000

$0.8989

$4,494.5000

10000

$0.8989

$8,989.0000

image of 单 FET、MOSFET>TPHR6503PL1,LQ
image of 单 FET、MOSFET>TPHR6503PL1,LQ
TPHR6503PL1,LQ
TPHR6503PL1,LQ
单 FET、MOSFET
Toshiba Electronic Devices and Storage Corporation
UMOS9 SOP-ADV(N
卷带式 (TR)
15151
产品参数
PDF(1)
类型描述
制造商Toshiba Electronic Devices and Storage Corporation
系列U-MOSIX-H
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱8-PowerTDFN
安装类型Surface Mount
工作温度175°C
技术MOSFET (Metal Oxide)
场效应管类型N-Channel
电流 - 连续漏极 (Id) @ 25°C150A (Tc)
Rds On(最大)@Id、Vgs0.65mOhm @ 50A, 10V
功耗(最大)960mW (Ta), 210W (Tc)
Vgs(th)(最大值)@Id2.1V @ 1mA
供应商设备包8-SOP Advance (5x5.75)
驱动电压(最大导通电阻、最小导通电阻)4.5V, 10V
Vgs(最大)±20V
漏源电压 (Vdss)30 V
栅极电荷 (Qg)(最大值)@Vgs110 nC @ 10 V
输入电容 (Ciss)(最大值)@Vds10000 pF @ 15 V
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