TPH1R204PL1,LQ

  • image of 单 FET、MOSFET>TPH1R204PL1,LQ
  • image of 单 FET、MOSFET>TPH1R204PL1,LQ
TPH1R204PL1,LQ
单 FET、MOSFET
Toshiba Electronic Devices and Storage Corporation
UMOS9 SOP-ADV(N
卷带式 (TR)
13196
: $0.6161
: 13196

1

$1.5655

$1.5655

10

$1.2827

$12.8270

100

$0.9999

$99.9900

500

$0.8484

$424.2000

1000

$0.6868

$686.8000

2000

$0.6464

$1,292.8000

5000

$0.6161

$3,080.5000

10000

$0.6060

$6,060.0000

image of 单 FET、MOSFET>TPH1R204PL1,LQ
image of 单 FET、MOSFET>TPH1R204PL1,LQ
TPH1R204PL1,LQ
TPH1R204PL1,LQ
单 FET、MOSFET
Toshiba Electronic Devices and Storage Corporation
UMOS9 SOP-ADV(N
卷带式 (TR)
13196
产品参数
PDF(1)
类型描述
制造商Toshiba Electronic Devices and Storage Corporation
系列U-MOSIX-H
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱8-PowerTDFN
安装类型Surface Mount
工作温度175°C
技术MOSFET (Metal Oxide)
场效应管类型N-Channel
电流 - 连续漏极 (Id) @ 25°C150A (Tc)
Rds On(最大)@Id、Vgs1.24mOhm @ 50A, 10V
功耗(最大)960mW (Ta), 170W (Tc)
Vgs(th)(最大值)@Id2.4V @ 500µA
供应商设备包8-SOP Advance (5x5.75)
驱动电压(最大导通电阻、最小导通电阻)4.5V, 10V
Vgs(最大)±20V
漏源电压 (Vdss)40 V
栅极电荷 (Qg)(最大值)@Vgs74 nC @ 10 V
输入电容 (Ciss)(最大值)@Vds7200 pF @ 20 V
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