TK6R8A08QM,S4X

  • image of 单 FET、MOSFET>TK6R8A08QM,S4X
  • image of 单 FET、MOSFET>TK6R8A08QM,S4X
TK6R8A08QM,S4X
单 FET、MOSFET
Toshiba Electronic Devices and Storage Corporation
UMOS10 TO-220SI
管子
40
: $1.2221
: 40

1

$1.2221

$1.2221

50

$0.9797

$48.9850

100

$0.7777

$77.7700

500

$0.6565

$328.2500

1000

$0.5353

$535.3000

2000

$0.5050

$1,010.0000

5000

$0.4848

$2,424.0000

10000

$0.4545

$4,545.0000

image of 单 FET、MOSFET>TK6R8A08QM,S4X
image of 单 FET、MOSFET>TK6R8A08QM,S4X
TK6R8A08QM,S4X
TK6R8A08QM,S4X
单 FET、MOSFET
Toshiba Electronic Devices and Storage Corporation
UMOS10 TO-220SI
管子
40
产品参数
PDF(1)
类型描述
制造商Toshiba Electronic Devices and Storage Corporation
系列U-MOSX-H
包裹管子
产品状态ACTIVE
包装/箱TO-220-3 Full Pack
安装类型Through Hole
工作温度175°C
技术MOSFET (Metal Oxide)
场效应管类型N-Channel
电流 - 连续漏极 (Id) @ 25°C58A (Tc)
Rds On(最大)@Id、Vgs6.8mOhm @ 29A, 10V
功耗(最大)41W (Tc)
Vgs(th)(最大值)@Id3.5V @ 500µA
供应商设备包TO-220SIS
驱动电压(最大导通电阻、最小导通电阻)6V, 10V
Vgs(最大)±20V
漏源电压 (Vdss)80 V
栅极电荷 (Qg)(最大值)@Vgs39 nC @ 10 V
输入电容 (Ciss)(最大值)@Vds2700 pF @ 40 V
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