SSM6P816R,LF

  • image of FET、MOSFET 阵列>SSM6P816R,LF
  • image of FET、MOSFET 阵列>SSM6P816R,LF
SSM6P816R,LF
FET、MOSFET 阵列
Toshiba Electronic Devices and Storage Corporation
MOSFET 2P-CH 20
卷带式 (TR)
4149
: $0.4848
: 4149

1

$0.4848

$0.4848

10

$0.4141

$4.1410

100

$0.2929

$29.2900

500

$0.2222

$111.1000

1000

$0.1818

$181.8000

3000

$0.1616

$484.8000

6000

$0.1515

$909.0000

9000

$0.1414

$1,272.6000

30000

$0.1414

$4,242.0000

image of FET、MOSFET 阵列>SSM6P816R,LF
image of FET、MOSFET 阵列>SSM6P816R,LF
SSM6P816R,LF
SSM6P816R,LF
FET、MOSFET 阵列
Toshiba Electronic Devices and Storage Corporation
MOSFET 2P-CH 20
卷带式 (TR)
4149
产品参数
类型描述
制造商Toshiba Electronic Devices and Storage Corporation
系列-
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱6-SMD, Flat Leads
安装类型Surface Mount
配置2 P-Channel (Dual)
工作温度150°C
技术MOSFET (Metal Oxide)
功率 - 最大1.4W (Ta)
漏源电压 (Vdss)20V
电流 - 连续漏极 (Id) @ 25°C6A (Ta)
输入电容 (Ciss)(最大值)@Vds1030pF @ 10V
Rds On(最大)@Id、Vgs30.1mOhm @ 4A, 4.5V
栅极电荷 (Qg)(最大值)@Vgs16.6nC @ 4.5V
场效应管特性Logic Level Gate, 1.8V Drive
Vgs(th)(最大值)@Id1V @ 1mA
供应商设备包6-TSOP-F
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