SSM6N62TU,LXHF

  • image of FET、MOSFET 阵列>SSM6N62TU,LXHF
  • image of FET、MOSFET 阵列>SSM6N62TU,LXHF
SSM6N62TU,LXHF
FET、MOSFET 阵列
Toshiba Electronic Devices and Storage Corporation
MOSFET 2N-CH 20
卷带式 (TR)
1168
: $0.1414
: 1168

1

$0.4343

$0.4343

10

$0.3737

$3.7370

100

$0.2525

$25.2500

500

$0.2020

$101.0000

1000

$0.1616

$161.6000

3000

$0.1414

$424.2000

6000

$0.1414

$848.4000

9000

$0.1313

$1,181.7000

30000

$0.1313

$3,939.0000

image of FET、MOSFET 阵列>SSM6N62TU,LXHF
image of FET、MOSFET 阵列>SSM6N62TU,LXHF
SSM6N62TU,LXHF
SSM6N62TU,LXHF
FET、MOSFET 阵列
Toshiba Electronic Devices and Storage Corporation
MOSFET 2N-CH 20
卷带式 (TR)
1168
产品参数
PDF(1)
类型描述
制造商Toshiba Electronic Devices and Storage Corporation
系列-
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱6-SMD, Flat Leads
安装类型Surface Mount
配置2 N-Channel (Dual)
工作温度150°C
技术MOSFET (Metal Oxide)
功率 - 最大500mW (Ta)
漏源电压 (Vdss)20V
电流 - 连续漏极 (Id) @ 25°C800mA (Ta)
输入电容 (Ciss)(最大值)@Vds177pF @ 10V
Rds On(最大)@Id、Vgs85mOhm @ 800mA, 4.5V
栅极电荷 (Qg)(最大值)@Vgs2nC @ 4.5V
场效应管特性Logic Level Gate, 1.2V Drive
Vgs(th)(最大值)@Id1V @ 1mA
供应商设备包UF6
年级Automotive
资质AEC-Q101
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