SSM6N48FU,LF

  • image of FET、MOSFET 阵列>SSM6N48FU,LF
  • image of FET、MOSFET 阵列>SSM6N48FU,LF
SSM6N48FU,LF
FET、MOSFET 阵列
Toshiba Electronic Devices and Storage Corporation
MOSFET 2N-CH 30
卷带式 (TR)
2750
: $0.4343
: 2750

1

$0.4343

$0.4343

10

$0.3030

$3.0300

100

$0.1515

$15.1500

500

$0.1313

$65.6500

1000

$0.0909

$90.9000

3000

$0.0808

$242.4000

6000

$0.0707

$424.2000

9000

$0.0606

$545.4000

30000

$0.0606

$1,818.0000

75000

$0.0505

$3,787.5000

150000

$0.0505

$7,575.0000

image of FET、MOSFET 阵列>SSM6N48FU,LF
image of FET、MOSFET 阵列>SSM6N48FU,LF
SSM6N48FU,LF
SSM6N48FU,LF
FET、MOSFET 阵列
Toshiba Electronic Devices and Storage Corporation
MOSFET 2N-CH 30
卷带式 (TR)
2750
产品参数
PDF(1)
类型描述
制造商Toshiba Electronic Devices and Storage Corporation
系列U-MOSIII
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱6-TSSOP, SC-88, SOT-363
安装类型Surface Mount
配置2 N-Channel (Dual)
工作温度150°C
技术MOSFET (Metal Oxide)
功率 - 最大300mW
漏源电压 (Vdss)30V
电流 - 连续漏极 (Id) @ 25°C100mA (Ta)
输入电容 (Ciss)(最大值)@Vds15.1pF @ 3V
Rds On(最大)@Id、Vgs3.2Ohm @ 10mA, 4V
Vgs(th)(最大值)@Id1.5V @ 100µA
供应商设备包US6
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