SSM6K818R,LF

  • image of 单 FET、MOSFET>SSM6K818R,LF
  • image of 单 FET、MOSFET>SSM6K818R,LF
SSM6K818R,LF
单 FET、MOSFET
Toshiba Electronic Devices and Storage Corporation
N-CH MOSFET 30V
卷带式 (TR)
5610
: $0.2525
: 5610

1

$0.6767

$0.6767

10

$0.5858

$5.8580

100

$0.4040

$40.4000

500

$0.3434

$171.7000

1000

$0.2929

$292.9000

3000

$0.2525

$757.5000

6000

$0.2424

$1,454.4000

9000

$0.2323

$2,090.7000

image of 单 FET、MOSFET>SSM6K818R,LF
image of 单 FET、MOSFET>SSM6K818R,LF
SSM6K818R,LF
SSM6K818R,LF
单 FET、MOSFET
Toshiba Electronic Devices and Storage Corporation
N-CH MOSFET 30V
卷带式 (TR)
5610
产品参数
类型描述
制造商Toshiba Electronic Devices and Storage Corporation
系列-
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱6-SMD, Flat Leads
安装类型Surface Mount
工作温度150°C
技术MOSFET (Metal Oxide)
场效应管类型N-Channel
电流 - 连续漏极 (Id) @ 25°C15A (Ta)
Rds On(最大)@Id、Vgs12mOhm @ 4A, 4.5V
功耗(最大)1.5W (Ta)
Vgs(th)(最大值)@Id2.1V @ 100µA
供应商设备包6-TSOP-F
年级Automotive
驱动电压(最大导通电阻、最小导通电阻)4.5V, 10V
Vgs(最大)±20V
漏源电压 (Vdss)30 V
栅极电荷 (Qg)(最大值)@Vgs7.5 nC @ 4.5 V
输入电容 (Ciss)(最大值)@Vds1130 pF @ 15 V
资质AEC-Q101
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