SSM3J371R,LXHF

  • image of 单 FET、MOSFET>SSM3J371R,LXHF
  • image of 单 FET、MOSFET>SSM3J371R,LXHF
SSM3J371R,LXHF
单 FET、MOSFET
Toshiba Electronic Devices and Storage Corporation
SMOS P-CH VDSS:
卷带式 (TR)
13039
: $0.1010
: 13039

1

$0.3737

$0.3737

10

$0.2929

$2.9290

100

$0.1717

$17.1700

500

$0.1616

$80.8000

1000

$0.1111

$111.1000

3000

$0.1010

$303.0000

6000

$0.1010

$606.0000

9000

$0.0909

$818.1000

30000

$0.0808

$2,424.0000

75000

$0.0808

$6,060.0000

image of 单 FET、MOSFET>SSM3J371R,LXHF
SSM3J371R,LXHF
SSM3J371R,LXHF
单 FET、MOSFET
Toshiba Electronic Devices and Storage Corporation
SMOS P-CH VDSS:
卷带式 (TR)
13039
产品参数
PDF(1)
类型描述
制造商Toshiba Electronic Devices and Storage Corporation
系列U-MOSVI
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱SOT-23-3 Flat Leads
安装类型Surface Mount
工作温度150°C
技术MOSFET (Metal Oxide)
场效应管类型P-Channel
电流 - 连续漏极 (Id) @ 25°C4A (Ta)
Rds On(最大)@Id、Vgs55mOhm @ 3A, 4.5V
功耗(最大)1W (Ta)
Vgs(th)(最大值)@Id1V @ 1mA
供应商设备包SOT-23F
年级Automotive
驱动电压(最大导通电阻、最小导通电阻)1.5V, 4.5V
Vgs(最大)+6V, -8V
漏源电压 (Vdss)20 V
栅极电荷 (Qg)(最大值)@Vgs10.4 nC @ 4.5 V
输入电容 (Ciss)(最大值)@Vds630 pF @ 10 V
资质AEC-Q101
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