SQA444CEJW-T1_GE3

  • image of 单 FET、MOSFET>SQA444CEJW-T1_GE3
  • image of 单 FET、MOSFET>SQA444CEJW-T1_GE3
  • image of 单 FET、MOSFET>SQA444CEJW-T1_GE3
  • image of 单 FET、MOSFET>SQA444CEJW-T1_GE3
SQA444CEJW-T1_GE3
单 FET、MOSFET
Vishay / Siliconix
AUTOMOTIVE N-CH
卷带式 (TR)
2554
: $0.1515
: 2554

1

$0.4646

$0.4646

10

$0.3939

$3.9390

100

$0.2727

$27.2700

500

$0.2121

$106.0500

1000

$0.1717

$171.7000

3000

$0.1515

$454.5000

6000

$0.1515

$909.0000

9000

$0.1414

$1,272.6000

30000

$0.1313

$3,939.0000

75000

$0.1313

$9,847.5000

image of 单 FET、MOSFET>SQA444CEJW-T1_GE3
image of 单 FET、MOSFET>SQA444CEJW-T1_GE3
image of 单 FET、MOSFET>SQA444CEJW-T1_GE3
SQA444CEJW-T1_GE3
SQA444CEJW-T1_GE3
单 FET、MOSFET
Vishay / Siliconix
AUTOMOTIVE N-CH
卷带式 (TR)
2554
产品参数
PDF(1)
类型描述
制造商Vishay / Siliconix
系列TrenchFET®
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱PowerPAK® SC-70-6
安装类型Surface Mount, Wettable Flank
工作温度-55°C ~ 175°C (TJ)
技术MOSFET (Metal Oxide)
场效应管类型N-Channel
电流 - 连续漏极 (Id) @ 25°C9A (Tc)
Rds On(最大)@Id、Vgs39mOhm @ 4.5A, 10V
功耗(最大)13.6W (Tc)
Vgs(th)(最大值)@Id2.5V @ 250µA
供应商设备包PowerPAK®SC-70W-6
年级Automotive
驱动电压(最大导通电阻、最小导通电阻)4.5V, 10V
Vgs(最大)±20V
漏源电压 (Vdss)60 V
栅极电荷 (Qg)(最大值)@Vgs9 nC @ 10 V
输入电容 (Ciss)(最大值)@Vds530 pF @ 25 V
资质AEC-Q101
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