NXH100T120L3Q0S1NG

  • image of IGBT模块>NXH100T120L3Q0S1NG
  • image of IGBT模块>NXH100T120L3Q0S1NG
NXH100T120L3Q0S1NG
IGBT模块
Sanyo Semiconductor/onsemi
1200V GEN III Q
托盘
24
: $61.1757
: 24

1

$61.1757

$61.1757

24

$55.6207

$1,334.8968

48

$53.7623

$2,580.5904

96

$50.0556

$4,805.3376

image of IGBT模块>NXH100T120L3Q0S1NG
NXH100T120L3Q0S1NG
NXH100T120L3Q0S1NG
IGBT模块
Sanyo Semiconductor/onsemi
1200V GEN III Q
托盘
24
产品参数
PDF(1)
类型描述
制造商Sanyo Semiconductor/onsemi
系列-
包裹托盘
产品状态ACTIVE
包装/箱Module
安装类型Chassis Mount
输入Standard
配置Three Level Inverter
工作温度-40°C ~ 175°C (TJ)
Vce(on)(最大值)@Vge, Ic2.2V @ 15V, 75A
NTC热敏电阻Yes
供应商设备包18-PIM/Q0PACK (55x32.5)
集电极电流 (Ic)(最大)54 A
电压 - 集电极发射极击穿(最大)650 V
功率 - 最大122 W
电流 - 集电极截止(最大)200 µA
输入电容 (Cies) @ Vce4877 pF @ 25 V
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