NXH003P120M3F2PTNG

  • image of FET、MOSFET 阵列>NXH003P120M3F2PTNG
  • image of FET、MOSFET 阵列>NXH003P120M3F2PTNG
  • image of FET、MOSFET 阵列>NXH003P120M3F2PTNG
  • image of FET、MOSFET 阵列>NXH003P120M3F2PTNG
NXH003P120M3F2PTNG
FET、MOSFET 阵列
Sanyo Semiconductor/onsemi
SILICON CARBIDE
托盘
20
: $244.7432
: 20

1

$261.3072

$261.3072

20

$244.7432

$4,894.8640

40

$235.5421

$9,421.6840

image of FET、MOSFET 阵列>NXH003P120M3F2PTNG
image of FET、MOSFET 阵列>NXH003P120M3F2PTNG
image of FET、MOSFET 阵列>NXH003P120M3F2PTNG
NXH003P120M3F2PTNG
NXH003P120M3F2PTNG
FET、MOSFET 阵列
Sanyo Semiconductor/onsemi
SILICON CARBIDE
托盘
20
产品参数
PDF(1)
类型描述
制造商Sanyo Semiconductor/onsemi
系列-
包裹托盘
产品状态ACTIVE
包装/箱Module
安装类型Chassis Mount
配置2 N-Channel (Half Bridge)
工作温度-40°C ~ 150°C (TJ)
技术Silicon Carbide (SiC)
功率 - 最大1.48kW (Tj)
漏源电压 (Vdss)1200V (1.2kV)
电流 - 连续漏极 (Id) @ 25°C435A (Tj)
输入电容 (Ciss)(最大值)@Vds20889pF @ 800V
Rds On(最大)@Id、Vgs5mOhm @ 200A, 18V
栅极电荷 (Qg)(最大值)@Vgs1200nC @ 20V
Vgs(th)(最大值)@Id4.4V @ 160mA
供应商设备包36-PIM (56.7x62.8)
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