NVMFS6H836NT3G

  • image of 单 FET、MOSFET>NVMFS6H836NT3G
  • image of 单 FET、MOSFET>NVMFS6H836NT3G
NVMFS6H836NT3G
单 FET、MOSFET
Sanyo Semiconductor/onsemi
T8 80V SO8FL
卷带式 (TR)
5000
: $0.5555
: 5000

1

$1.4140

$1.4140

10

$1.1615

$11.6150

100

$0.8989

$89.8900

500

$0.7575

$378.7500

1000

$0.6161

$616.1000

2000

$0.5858

$1,171.6000

5000

$0.5555

$2,777.5000

10000

$0.5353

$5,353.0000

image of 单 FET、MOSFET>NVMFS6H836NT3G
image of 单 FET、MOSFET>NVMFS6H836NT3G
NVMFS6H836NT3G
NVMFS6H836NT3G
单 FET、MOSFET
Sanyo Semiconductor/onsemi
T8 80V SO8FL
卷带式 (TR)
5000
产品参数
PDF(1)
类型描述
制造商Sanyo Semiconductor/onsemi
系列-
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱8-PowerTDFN, 5 Leads
安装类型Surface Mount
工作温度-55°C ~ 175°C (TJ)
技术MOSFET (Metal Oxide)
场效应管类型N-Channel
电流 - 连续漏极 (Id) @ 25°C15A (Ta), 74A (Tc)
Rds On(最大)@Id、Vgs6.7mOhm @ 15A, 10V
功耗(最大)3.7W (Ta), 89W (Tc)
Vgs(th)(最大值)@Id4V @ 95µA
供应商设备包5-DFN (5x6) (8-SOFL)
年级Automotive
驱动电压(最大导通电阻、最小导通电阻)10V
Vgs(最大)±20V
漏源电压 (Vdss)80 V
栅极电荷 (Qg)(最大值)@Vgs25 nC @ 10 V
输入电容 (Ciss)(最大值)@Vds1640 pF @ 40 V
资质AEC-Q101
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