IPTC026N12NM6ATMA1

  • image of 单 FET、MOSFET>IPTC026N12NM6ATMA1
  • image of 单 FET、MOSFET>IPTC026N12NM6ATMA1
IPTC026N12NM6ATMA1
单 FET、MOSFET
IR (Infineon Technologies)
TRENCH >=100V
卷带式 (TR)
0
: $3.4643
: 0

1

$6.1105

$6.1105

10

$5.5146

$55.1460

25

$5.2621

$131.5525

100

$4.5652

$456.5200

250

$4.3632

$1,090.8000

500

$3.9794

$1,989.7000

1800

$3.4643

$6,235.7400

image of 单 FET、MOSFET>IPTC026N12NM6ATMA1
image of 单 FET、MOSFET>IPTC026N12NM6ATMA1
IPTC026N12NM6ATMA1
IPTC026N12NM6ATMA1
单 FET、MOSFET
IR (Infineon Technologies)
TRENCH >=100V
卷带式 (TR)
0
产品参数
PDF(1)
类型描述
制造商IR (Infineon Technologies)
系列OptiMOS™ 6
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱16-PowerSOP Module
安装类型Surface Mount
工作温度-55°C ~ 175°C (TJ)
技术MOSFET (Metal Oxide)
场效应管类型N-Channel
电流 - 连续漏极 (Id) @ 25°C26A (Ta), 222A (Tc)
Rds On(最大)@Id、Vgs2.6mOhm @ 115A, 10V
功耗(最大)3.8W (Ta), 278W (Tc)
Vgs(th)(最大值)@Id3.6V @ 169µA
供应商设备包PG-HDSOP-16-2
驱动电压(最大导通电阻、最小导通电阻)8V, 10V
Vgs(最大)±20V
漏源电压 (Vdss)120 V
栅极电荷 (Qg)(最大值)@Vgs88 nC @ 10 V
输入电容 (Ciss)(最大值)@Vds6500 pF @ 60 V
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