HN1A01FU-Y,LXHF

  • image of 双极晶体管阵列>HN1A01FU-Y,LXHF
  • image of 双极晶体管阵列>HN1A01FU-Y,LXHF
HN1A01FU-Y,LXHF
双极晶体管阵列
Toshiba Electronic Devices and Storage Corporation
AUTO AEC-Q PNP
卷带式 (TR)
5978
: $0.0606
: 5978

1

$0.3535

$0.3535

10

$0.2424

$2.4240

100

$0.1212

$12.1200

500

$0.1010

$50.5000

1000

$0.0707

$70.7000

3000

$0.0606

$181.8000

6000

$0.0606

$363.6000

9000

$0.0505

$454.5000

30000

$0.0505

$1,515.0000

75000

$0.0404

$3,030.0000

150000

$0.0404

$6,060.0000

image of 双极晶体管阵列>HN1A01FU-Y,LXHF
image of 双极晶体管阵列>HN1A01FU-Y,LXHF
HN1A01FU-Y,LXHF
HN1A01FU-Y,LXHF
双极晶体管阵列
Toshiba Electronic Devices and Storage Corporation
AUTO AEC-Q PNP
卷带式 (TR)
5978
产品参数
PDF(1)
PDF(2)
类型描述
制造商Toshiba Electronic Devices and Storage Corporation
系列-
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱6-TSSOP, SC-88, SOT-363
安装类型Surface Mount
晶体管类型2 PNP (Dual)
功率 - 最大200mW
集电极电流 (Ic)(最大)150mA
电压 - 集电极发射极击穿(最大)50V
Vce 饱和度(最大值)@Ib、Ic300mV @ 10mA, 100mA
电流 - 集电极截止(最大)100nA (ICBO)
直流电流增益 (hFE)(最小值)@ Ic、Vce120 @ 2mA, 6V
频率-转变80MHz
供应商设备包US6
年级Automotive
资质AEC-Q101
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