G220P03D32

  • image of FET、MOSFET 阵列>G220P03D32
  • image of FET、MOSFET 阵列>G220P03D32
G220P03D32
FET、MOSFET 阵列
Goford Semiconductor
MOSFET P+P-CH 3
卷带式 (TR)
4960
: $0.1919
: 4960

1

$0.5959

$0.5959

10

$0.5151

$5.1510

100

$0.3535

$35.3500

500

$0.2727

$136.3500

1000

$0.2222

$222.2000

2000

$0.2020

$404.0000

5000

$0.1919

$959.5000

10000

$0.1818

$1,818.0000

25000

$0.1717

$4,292.5000

50000

$0.1717

$8,585.0000

image of FET、MOSFET 阵列>G220P03D32
image of FET、MOSFET 阵列>G220P03D32
G220P03D32
G220P03D32
FET、MOSFET 阵列
Goford Semiconductor
MOSFET P+P-CH 3
卷带式 (TR)
4960
产品参数
PDF(1)
类型描述
制造商Goford Semiconductor
系列-
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱8-PowerVDFN
安装类型Surface Mount
配置2 P-Channel
工作温度-55°C ~ 150°C (TJ)
技术MOSFET (Metal Oxide)
功率 - 最大30W (Tc)
漏源电压 (Vdss)30V
电流 - 连续漏极 (Id) @ 25°C12A (Tc)
输入电容 (Ciss)(最大值)@Vds1305pF @ 15V
Rds On(最大)@Id、Vgs22mOhm @ 3A, 10V
栅极电荷 (Qg)(最大值)@Vgs25nC @ 10V
Vgs(th)(最大值)@Id2V @ 250µA
供应商设备包8-DFN (3.15x3.05) Dual
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