G06NP06S2

  • image of FET、MOSFET 阵列>G06NP06S2
  • image of FET、MOSFET 阵列>G06NP06S2
G06NP06S2
FET、MOSFET 阵列
Goford Semiconductor
MOSFET N/P-CH 6
卷带式 (TR)
11960
: $0.8383
: 11960

1

$0.8383

$0.8383

10

$0.7272

$7.2720

100

$0.5050

$50.5000

500

$0.4242

$212.1000

1000

$0.3636

$363.6000

2000

$0.3232

$646.4000

4000

$0.3232

$1,292.8000

8000

$0.3030

$2,424.0000

12000

$0.2828

$3,393.6000

28000

$0.2828

$7,918.4000

image of FET、MOSFET 阵列>G06NP06S2
image of FET、MOSFET 阵列>G06NP06S2
G06NP06S2
G06NP06S2
FET、MOSFET 阵列
Goford Semiconductor
MOSFET N/P-CH 6
卷带式 (TR)
11960
产品参数
PDF(1)
类型描述
制造商Goford Semiconductor
系列TrenchFET®
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱8-SOP
安装类型Surface Mount
配置N and P-Channel
工作温度-55°C ~ 150°C (TJ)
技术MOSFET (Metal Oxide)
功率 - 最大2W (Tc), 2.5W (Tc)
漏源电压 (Vdss)60V
电流 - 连续漏极 (Id) @ 25°C6A (Tc)
输入电容 (Ciss)(最大值)@Vds1350pF @ 30V, 2610pF @ 30V
Rds On(最大)@Id、Vgs35mOhm @ 6A, 10V, 45mOhm @ 5A, 10V
栅极电荷 (Qg)(最大值)@Vgs22nC @ 10V, 25nC @ 10V
Vgs(th)(最大值)@Id2.5V @ 250µA, 3.5V @ 250µA
供应商设备包8-SOIC (0.154", 3.90mm Width)
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