1
$2.2119
$2.2119
10
$1.9897
$19.8970
25
$1.8786
$46.9650
100
$1.5958
$159.5800
250
$1.5049
$376.2250
500
$1.3130
$656.5000
1000
$1.0908
$1,090.8000
2500
$1.0100
$2,525.0000
5000
$0.9797
$4,898.5000
10000
$0.9393
$9,393.0000
| 类型 | 描述 |
| 制造商 | IR (Infineon Technologies) |
| 系列 | OptiMOS™ 5 |
| 包裹 | 卷带式 (TR) |
| 产品状态 | ACTIVE |
| 包装/箱 | 8-PowerTDFN |
| 安装类型 | Surface Mount |
| 工作温度 | -55°C ~ 150°C (TJ) |
| 技术 | MOSFET (Metal Oxide) |
| 场效应管类型 | N-Channel |
| 电流 - 连续漏极 (Id) @ 25°C | 10.7A (Ta), 76A (Tc) |
| Rds On（最大）@Id、Vgs | 10.5mOhm @ 40A, 10V |
| 功耗（最大） | 2.5W (Ta), 125W (Tc) |
| Vgs(th)（最大值）@Id | 2.3V @ 91µA |
| 供应商设备包 | PG-TDSON-8 |
| 驱动电压（最大导通电阻、最小导通电阻） | 4.5V, 10V |
| Vgs（最大） | ±20V |
| 漏源电压 (Vdss) | 150 V |
| 栅极电荷 (Qg)（最大值）@Vgs | 23 nC @ 4.5 V |
| 输入电容 (Ciss)（最大值）@Vds | 3000 pF @ 75 V |
