AONH36328

  • image of FET、MOSFET 阵列>AONH36328
  • image of FET、MOSFET 阵列>AONH36328
AONH36328
FET、MOSFET 阵列
Alpha and Omega Semiconductor, Inc.
MOSFET 2N-CH 30
卷带式 (TR)
0
: $0.2323
: 0

5000

$0.2323

$1,161.5000

10000

$0.2222

$2,222.0000

25000

$0.2121

$5,302.5000

image of FET、MOSFET 阵列>AONH36328
AONH36328
AONH36328
FET、MOSFET 阵列
Alpha and Omega Semiconductor, Inc.
MOSFET 2N-CH 30
卷带式 (TR)
0
产品参数
PDF(1)
类型描述
制造商Alpha and Omega Semiconductor, Inc.
系列-
包裹卷带式 (TR)
产品状态ACTIVE
包装/箱8-WDFN Exposed Pad
安装类型Surface Mount
配置2 N-Channel (Dual) Asymmetrical
工作温度-55°C ~ 150°C (TJ)
技术MOSFET (Metal Oxide)
功率 - 最大2.5W (Ta), 23W (Tc)
漏源电压 (Vdss)30V
电流 - 连续漏极 (Id) @ 25°C13.8A (Ta), 18A (Tc)
输入电容 (Ciss)(最大值)@Vds700pF @ 15V
Rds On(最大)@Id、Vgs8.5mOhm @ 20A, 10V
栅极电荷 (Qg)(最大值)@Vgs20nC @ 10V
Vgs(th)(最大值)@Id2.1V @ 250µA
供应商设备包8-DFN-EP (3x3)
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