313
$0.9696
$303.4848
TYPE | DESCRIPTION |
Mfr | NXP Semiconductors |
Series | - |
Package | Bulk |
Product Status | ACTIVE |
Package / Case | TO-220-3 |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 175°C (TJ) |
Technology | MOSFET (Metal Oxide) |
FET Type | N-Channel |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Rds On (Max) @ Id, Vgs | 8.7mOhm @ 10A, 10V |
Power Dissipation (Max) | 170W (Tc) |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Supplier Device Package | TO-220AB |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs (Max) | ±20V |
Drain to Source Voltage (Vdss) | 80 V |
Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 3346 pF @ 40 V |