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WNSC5D20650CW6Q

  • image of Diode Arrays>WNSC5D20650CW6Q
  • image of Diode Arrays>WNSC5D20650CW6Q
  • image of Diode Arrays>WNSC5D20650CW6Q
  • image of Diode Arrays>WNSC5D20650CW6Q
WNSC5D20650CW6Q
Diode Arrays
WeEn Semiconductors Co., Ltd
DIODE ARR SIC 6
Bulk
0
image of Diode Arrays>WNSC5D20650CW6Q
image of Diode Arrays>WNSC5D20650CW6Q
image of Diode Arrays>WNSC5D20650CW6Q
WNSC5D20650CW6Q
WNSC5D20650CW6Q
Diode Arrays
WeEn Semiconductors Co., Ltd
DIODE ARR SIC 6
Bulk
0
Product parameter
TYPEDESCRIPTION
MfrWeEn Semiconductors Co., Ltd
Series-
PackageBulk
Product StatusACTIVE
Package / CaseTO-247-3
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Diode Configuration1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode)20A
Supplier Device PackageTO-247-3
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.7 V @ 20 A
Current - Reverse Leakage @ Vr50 µA @ 650 V
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