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NXH004P120M3F2PTNG

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  • image of FET, MOSFET Arrays>NXH004P120M3F2PTNG
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NXH004P120M3F2PTNG
FET, MOSFET Arrays
Sanyo Semiconductor/onsemi
SILICON CARBIDE
Tray
0
: $203.8584
: 0

1

$217.6449

$217.6449

20

$203.8584

$4,077.1680

40

$196.1925

$7,847.7000

image of FET, MOSFET Arrays>NXH004P120M3F2PTNG
image of FET, MOSFET Arrays>NXH004P120M3F2PTNG
image of FET, MOSFET Arrays>NXH004P120M3F2PTNG
NXH004P120M3F2PTNG
NXH004P120M3F2PTNG
FET, MOSFET Arrays
Sanyo Semiconductor/onsemi
SILICON CARBIDE
Tray
0
Product parameter
PDF(1)
TYPEDESCRIPTION
MfrSanyo Semiconductor/onsemi
Series-
PackageTray
Product StatusACTIVE
Package / CaseModule
Mounting TypeChassis Mount
Configuration2 N-Channel (Half Bridge)
Operating Temperature-40°C ~ 175°C (TJ)
TechnologySilicon Carbide (SiC)
Power - Max1.1kW (Tj)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C338A (Tj)
Input Capacitance (Ciss) (Max) @ Vds16410pF @ 800V
Rds On (Max) @ Id, Vgs5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs876nC @ 20V
Vgs(th) (Max) @ Id4.4V @ 120mA
Supplier Device Package36-PIM (56.7x62.8)
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