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IMBG65R015M2HXTMA1

  • image of Single FETs, MOSFETs>IMBG65R015M2HXTMA1
  • image of Single FETs, MOSFETs>IMBG65R015M2HXTMA1
IMBG65R015M2HXTMA1
Single FETs, MOSFETs
IR (Infineon Technologies)
SILICON CARBIDE
Tape & Reel (TR)
0
: $14.5238
: 0

1

$21.5635

$21.5635

10

$19.8869

$198.8690

25

$18.9981

$474.9525

100

$16.9882

$1,698.8200

250

$16.2004

$4,050.1000

500

$15.4227

$7,711.3500

1000

$14.5238

$14,523.8000

image of Single FETs, MOSFETs>IMBG65R015M2HXTMA1
image of Single FETs, MOSFETs>IMBG65R015M2HXTMA1
IMBG65R015M2HXTMA1
IMBG65R015M2HXTMA1
Single FETs, MOSFETs
IR (Infineon Technologies)
SILICON CARBIDE
Tape & Reel (TR)
0
Product parameter
PDF(1)
TYPEDESCRIPTION
MfrIR (Infineon Technologies)
SeriesCoolSiC™ Gen 2
PackageTape & Reel (TR)
Product StatusACTIVE
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C115A (Tc)
Rds On (Max) @ Id, Vgs18mOhm @ 64.2A, 18V
Power Dissipation (Max)416W (Tc)
Vgs(th) (Max) @ Id5.6V @ 13mA
Supplier Device PackagePG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On)15V, 20V
Vgs (Max)+23V, -7V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds2792 pF @ 400 V
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