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GCMS040B120S1-E1

  • image of Single FETs, MOSFETs>GCMS040B120S1-E1
  • image of Single FETs, MOSFETs>GCMS040B120S1-E1
GCMS040B120S1-E1
Single FETs, MOSFETs
SemiQ
SIC 1200V 40M M
Tube
88
: $33.8855
: 88

1

$33.8855

$33.8855

10

$30.1081

$301.0810

100

$26.3307

$2,633.0700

image of Single FETs, MOSFETs>GCMS040B120S1-E1
image of Single FETs, MOSFETs>GCMS040B120S1-E1
GCMS040B120S1-E1
GCMS040B120S1-E1
Single FETs, MOSFETs
SemiQ
SIC 1200V 40M M
Tube
88
Product parameter
PDF(1)
TYPEDESCRIPTION
MfrSemiQ
Series-
PackageTube
Product StatusACTIVE
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiC (Silicon Carbide Junction Transistor)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C57A (Tc)
Rds On (Max) @ Id, Vgs52mOhm @ 40A, 20V
Power Dissipation (Max)242W (Tc)
Vgs(th) (Max) @ Id4V @ 10mA
Supplier Device PackageSOT-227
Drive Voltage (Max Rds On, Min Rds On)20V
Vgs (Max)+25V, -10V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs124 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds3110 pF @ 1000 V
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