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G3R40MT12D

  • image of Single FETs, MOSFETs>G3R40MT12D
  • image of Single FETs, MOSFETs>G3R40MT12D
  • image of Single FETs, MOSFETs>G3R40MT12D
  • image of Single FETs, MOSFETs>G3R40MT12D
G3R40MT12D
Single FETs, MOSFETs
GeneSiC Semiconductor
SIC MOSFET N-CH
Tube
1732
: $17.5942
: 1732

1

$17.5942

$17.5942

10

$16.0590

$160.5900

25

$15.4833

$387.0825

100

$14.6652

$1,466.5200

250

$14.1400

$3,535.0000

500

$13.7562

$6,878.1000

image of Single FETs, MOSFETs>G3R40MT12D
image of Single FETs, MOSFETs>G3R40MT12D
image of Single FETs, MOSFETs>G3R40MT12D
G3R40MT12D
G3R40MT12D
Single FETs, MOSFETs
GeneSiC Semiconductor
SIC MOSFET N-CH
Tube
1732
Product parameter
PDF(1)
TYPEDESCRIPTION
MfrGeneSiC Semiconductor
SeriesG3R™
PackageTube
Product StatusACTIVE
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologySiCFET (Silicon Carbide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C71A (Tc)
Rds On (Max) @ Id, Vgs48mOhm @ 35A, 15V
Power Dissipation (Max)333W (Tc)
Vgs(th) (Max) @ Id2.69V @ 10mA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)15V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Qg) (Max) @ Vgs106 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds2929 pF @ 800 V
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