- 产品型号 THGJFJT2T85BAT0
- 品牌 Toshiba Memory America, Inc. (Kioxia America, Inc.)
- RoHS Yes
- 描述 512GB UFS V4.0
- 分类 记忆
-
PDF
- 库存 1651
技术参数
- Package / Case 153-BGA
- Mounting Type Surface Mount
- Memory Size 4Tbit
- Memory Type Non-Volatile
- Operating Temperature -25°C ~ 85°C
- Voltage - Supply 2.4V ~ 2.7V
- Technology FLASH - NAND
- Clock Frequency 2.32 GHz
- Memory Format FLASH
- Supplier Device Package 153-BGA (11x13)
- Memory Interface UFS 4.0
- Memory Organization 512G x 8
- ECCN 3A991B1A
- HTSUS 8542.32.0071
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- RoHS Status ROHS3 Compliant
